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- Technology:
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- Diode Type:
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- Voltage - Peak Reverse (Max):
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- Current - Average Rectified (Io):
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- Voltage - Forward (Vf) (Max) @ If:
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Scopri i prodotti 5,331
immagine | Numero di parte | fabbricante | quantità | Periodo di consegna | Prezzo unitario | acquistare | descrizione | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
immagine | Numero di parte | fabbricante | quantità | Periodo di consegna | Prezzo unitario | acquistare | descrizione | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | ||
Diodes Incorporated |
4,036
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE GPP 4A 600V GBU
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GBU | GBU | Through Hole | Standard | Single Phase | 600V | 4A | 1V @ 2A | 5μA @ 600V | ||||
Diodes Incorporated |
2,671
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE GPP 100V 4A GBU
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GBU | GBU | Through Hole | Standard | Single Phase | 100V | 4A | 1V @ 2A | 5μA @ 100V | ||||
GeneSiC Semiconductor |
2,418
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
DIODE BRIDGE 200V 6A KBU
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-SIP,KBU | KBU | Through Hole | Standard | Single Phase | 200V | 6A | 1V @ 6A | 10μA @ 200V | ||||
Diodes Incorporated |
1,749
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE GPP 200V 8A GBU
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GBU | GBU | Through Hole | Standard | Single Phase | 200V | 8A | 1V @ 4A | 5μA @ 200V | ||||
Micro Commercial Co |
1,669
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
RECTIFIER BRIDGE 6A 200V PB-6
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-Square,PB-6 | PB-6 | Through Hole | Standard | Single Phase | 200V | 6A | 1.1V @ 3A | 10μA @ 200V | ||||
GeneSiC Semiconductor |
1,475
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
DIODE BRIDGE 1000V 8A KBU
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-SIP,KBU | KBU | Through Hole | Standard | Single Phase | 1kV | 8A | 1V @ 8A | 10μA @ 1000V | ||||
GeneSiC Semiconductor |
1,020
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
DIODE BRIDGE 600V 8A KBU
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-SIP,KBU | KBU | Through Hole | Standard | Single Phase | 600V | 8A | 1V @ 8A | 10μA @ 600V | ||||
Micro Commercial Co |
2,040
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
RECTIFIER BRIDGE 6A 600V PB-6
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-Square,PB-6 | PB-6 | Through Hole | Standard | Single Phase | 600V | 6A | 1.1V @ 3A | 10μA @ 600V | ||||
Diodes Incorporated |
50,461
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE GPP 1000V 10A GBJ
|
Tube | - | -65°C ~ 150°C (TJ) | 4-SIP,GBJ | GBJ | Through Hole | Standard | Single Phase | 1kV | 10A | 1.05V @ 5A | 10μA @ 1000V | ||||
Comchip Technology |
1,080
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE CELL 1000V 10A KBU
|
Tray | - | -55°C ~ 150°C (TJ) | 4-SIP,KBU | KBU | Through Hole | Standard | Single Phase | 1kV | 10A | 1V @ 5A | 10μA @ 1000V | ||||
Micro Commercial Co |
3,077
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE GPP 25A 800V GBJ
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GBJ | GBJ | Through Hole | Standard | Single Phase | 800V | 25A | 1.05V @ 12.5A | 10μA @ 800V | ||||
Micro Commercial Co |
1,366
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE GPP 25A 600V GBJ
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GBJ | GBJ | Through Hole | Standard | Single Phase | 600V | 25A | 1.05V @ 12.5A | 10μA @ 600V | ||||
Diodes Incorporated |
1,191
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE GPP 400V 25A GBJ
|
Tube | - | -65°C ~ 150°C (TJ) | 4-SIP,GBJ | GBJ | Through Hole | Standard | Single Phase | 400V | 25A | 1.05V @ 12.5A | 10μA @ 400V | ||||
Micro Commercial Co |
2,734
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
BRIDGE RECTIFIER 35A 800V GBJ
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GBJ | GBJ | Through Hole | Standard | Single Phase | 800V | 35A | 1.05V @ 17.5A | 10μA @ 800V | ||||
Micro Commercial Co |
2,573
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
BRIDGE RECTIFIER 35A 600V GBJ
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GBJ | GBJ | Through Hole | Standard | Single Phase | 600V | 35A | 1.05V @ 17.5A | 10μA @ 600V | ||||
Vishay Semiconductor Diodes Division |
1,982
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
DIODE 15A 600V GSIB-5S
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GSIB-5S | GSIB-5S | Through Hole | Standard | Single Phase | 600V | 3.5A | 950mV @ 7.5A | 10μA @ 600V | ||||
Diodes Incorporated |
1,765
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE GP 25A 1000V TH-HOLE
|
Tube | - | -65°C ~ 150°C (TJ) | 4-SIP,GBJ | GBJ | Through Hole | Standard | Single Phase | 1kV | 25A | 1.05V @ 12.5A | 10μA @ 1000V | ||||
Vishay Semiconductor Diodes Division |
1,149
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
RECTIFIER BRIDGE 1000V 20A BU
|
Tray | - | -55°C ~ 150°C (TJ) | 4-SIP,BU | isoCINK+? BU | Through Hole | Standard | Single Phase | 1kV | 3.5A | 1.05V @ 10A | 5μA @ 1000V | ||||
Vishay Semiconductor Diodes Division |
1,871
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
DIODE 25A 800V GSIB-5S
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GSIB-5S | GSIB-5S | Through Hole | Standard | Single Phase | 800V | 3.5A | 1V @ 12.5A | 10μA @ 800V | ||||
Micro Commercial Co |
14,910
|
3 giorni |
-
|
MOQ: 1 MPQ: 1
|
50A,600V BRIDGE RECTIFIER,GBJ
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,GBJ | GBJ | Through Hole | Standard | Single Phase | 600V | 50A | 1.1V @ 25A | 10μA @ 600V |