Infineon Technologies

BSC0911NDATMA1

descrizione :
MOSFET 2N-CH 25V 18A/30A TISON-8
pacchetto :
PG-TISON-8
Current - Continuous Drain (Id) @ 25°C :
18A,30A
Drain to Source Voltage (Vdss) :
25V
FET Feature :
Logic Level Gate,4.5V Drive
FET Type :
2 N-Channel (Dual) Asymmetrical
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1600pF @ 12V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerTDFN
Packaging :
Cut Tape (CT)
Power - Max :
1W
Rds On (Max) @ Id,Vgs :
3.2 mOhm @ 20A,10V
Series :
OptiMOS
Supplier Device Package :
PG-TISON-8
Vgs(th) (Max) @ Id :
2V @ 250μA

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