Infineon Technologies

BSC150N03LDGATMA1

descrizione :
MOSFET 2N-CH 30V 8A 8TDSON
pacchetto :
PG-TDSON-8
Current - Continuous Drain (Id) @ 25°C :
8A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerVDFN
Packaging :
Cut Tape (CT)
Power - Max :
26W
Rds On (Max) @ Id,Vgs :
15 mOhm @ 20A,10V
Series :
OptiMOS
Supplier Device Package :
PG-TDSON-8
Vgs(th) (Max) @ Id :
2.2V @ 250μA

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