ROHM Semiconductor

VT6M1T2CR

descrizione :
MOSFET N/P-CH 20V 0.1A VMT6
pacchetto :
VMT6
Current - Continuous Drain (Id) @ 25°C :
100mA
Drain to Source Voltage (Vdss) :
20V
FET Feature :
Logic Level Gate,1.2V Drive
FET Type :
N and P-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
7.1pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
6-SMD,Flat Leads
Packaging :
-
Power - Max :
120mW
Rds On (Max) @ Id,Vgs :
3.5 Ohm @ 100mA,4.5V
Series :
-
Supplier Device Package :
VMT6
Vgs(th) (Max) @ Id :
1V @ 100μA

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